Publications 2011
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RC-197 Kim, D.-H., B. Brar and J. A. del Alamo, "fT=688 GHz and fmax=800 GHz in Lg=40 nm In0.7Ga0.3As MHEMTs with gm,max>2.7 mS/um." IEEE International Electron Devices Meeting, Washington DC, December 5-7, 2011. (paper) (slides)
RC-196 Xia, L., V. Tokranov, S. R. Oktyabrsky, and J. A. del Alamo, "Performance Enhancement of p-channel InGaAs Quantum-Well FETs by Superposition of Process-Induced Uniaxial Strain and Epitaxially-grown Biaxial Strain." IEEE International Electron Devices Meeting, Washington DC, December 5-7, 2011. (paper) (slides)
RJ-133 del Alamo, J. A. "Nanometer-scale electronics with III-V compound semiconductors." Invited review paper . Nature, Vol. 479, pp. 317-323, 17 November 2011. (paper)
RC-195 del Alamo, J. A., "InAs HEMTs: the path to THz electronics?" Invited talk at Workshop on High-Performance Narrow-Bandgap HEMT Technology for Advanced Microwave Front-Ends: Towards the End of the Roadmap? European Microwave Week, Manchester, UK, October 9, 2011. (slides)
RJ-132 Xia, L., V. Tokranov, S. R. Oktyabrsky, and J. A. del Alamo, "Experimental Study of <100> Uniaxial Stress Effects on P-channel GaAs Quantum-Well FETs." IEEE Transactions on Electron Devices, Vol. 58, No. 8, pp. 2597-2603, August 2011. (paper)
RJ-131 Kharche, H., G. Klimeck, D.-H. Kim, J. A. del Alamo, and M. Luisier, "Multiscale Metrology and Optimization of Ultra-Scaled InAs Quantum Well FETs." IEEE Transactions on Electron Devices, Vol. 58, No. 7, pp. 1963-1971, July 2011. (paper)
RC-194 del Alamo, J. A. and J. Joh,"High-Voltage DC and RF Power Reliability of GaN HEMTs." Invited talk at 9th International Conference on Nitride Semiconductors (ICNS), Glasgow, UK, July 10-15, 2011. (slides)
RC-193 Gogineni, U., J. A. del Alamo and A. Valdes Garcia, "Analytical Model for RF Power Performance of Deeply Scaled CMOS Devices." IEEE Radio Frequency Integrated Circuits Symposium (RFIC), Baltimore, MD, June 5-7, 2011. (paper) (slides)
RC-192 Xia, L., V. Tokranov, S. Oktyabrsky and J. A. del Alamo, "Mobility Enhancement of Two-Dimensional hole Gas in an In0.24 Ga0.76 As Quantum Well by <100> Uniaxial Strain." 38th International Symposium on Compound Semiconductors (ISCS), Berlin, Germany, May 22-26, 2011. (paper) (slides)
RC-191 Kim, T.-W and J. A. del Alamo, "Injection Velocity in Thin-Channel InAs HEMTs." 23rd International Conference on Indium Phosphide and Related Materials (IPRM), Berlin, Germany, May 22-26, 2011. (paper) (slides)
RC-190 del Alamo, J. A., D.-H. Kim, T.-W. Kim, D. Jin, and D. A. Antoniadis, "III-V CMOS: What Have we Learned from HEMTs?" Invited talk at the 23rd International Conference on Indium Phosphide and Related Materials (IPRM), Berlin, Germany, May 22-26, 2011. (paper) (slides)
RC-189 del Alamo, J. A., "The High-Electron Mobility Transistor at 30: impressive accomplishments and exciting prospects." Invited Plenary Session talk at International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH), Palm Springs, CA, May 16-19, 2011, pp. 17-22. (paper) (slides)
RC-188 Joh, J. and J. A. del Alamo, "Impact of gate placement on RF degradation in GaN high electron mobility transistors." 2011 Reliability of Compound Semiconductors Workshop (ROCS), Palm Springs, CA, May 16, 2011, pp. 133-136. (paper) (slides)
RC-187 del Alamo, J. A., "III-V CMOS: the key to sub-10 nm electronics?" Invited talk at Materials Research Society Spring Meeting, San Francisco, CA, April 25-29, 2011. (slides)
RC-186 Joh, J. and J. A. del Alamo, "Time evolution of electrical degradation in GaN high electron mobility transistors." IEEE International Reliability Physics Symposium, Monterey, CA, April 10-14, 2011. (paper) (slides)
RJ-130 Kim, T.-W. and J. A. del Alamo, "InGaAs HEMT with InAs-rich InAlAs barrier spacer for reduced source resistance." Electronics Letters, Vol. 47, No. 6, pp. 406-407, March 17, 2011. (paper)
RJ-129 Xia, L., B. Boos, B. R. Bennett, M. G. Ancona, and J. A. del Alamo, "Hole Mobility Enhancement through <110> Uniaxial Strain in In0.41Ga0.59Sb Quantum-Well Field-Effect transistors." Applied Physics Letters, Vol. 98, 053505, 2011. (paper)
RJ-128 Joh, J. and J. A. del Alamo, "A Current-Transient Methodology for Trap Analysis for GaN High Electron Mobility Transistors." IEEE Transactions on Electron Devices, Vol. 48, No. 1, pp. 132-140, January 2011. (paper)