Publications 2014
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RC-231 Zhao, X., A. Vardi and J. A. del Alamo, "InGaAs/InAs Heterojunction Vertical Nanowire Tunnel FETs Fabricated by a Top-down Approach." IEEE International Electron Devices Meeting, San Francisco, CA, December 15-17, 2014, pp. 590-593. (paper)
RC-230 Kim, D.-H., T.-W. Kim, R. H. Baek, P. D. Kirsch, W. Maszara, J. A. del Alamo, D. A. Antoniadis, M. Urteaga, B. Brar, H. M. Kwon, C.-S. Shin, W.-K. Park, Y.-D. Cho, S. H. Shin, D. H. Ko and K.-S. Seo, "High-Performance III-V Devices for Future Logic Applications." Invited paper at IEEE International Electron Devices Meeting, San Francisco, CA, December 15-17, 2014, pp. 578-581. (paper)
RC-229 Lin, J., D. A. Antoniadis and J. A. del Alamo, "Novel Intrinsic and Extrinsic Engineering for High-Performance High-Density Self-Aligned InGaAs MOSFETs: Precise Channel Thickness Control and Sub-40 nm Metal Contacts." (Roger Haken Best Student Paper Award) IEEE International Electron Devices Meeting, San Francisco, CA, December 15-17, 2014, pp. 575-578. (paper)
RC-228 del Alamo, J. A., "InGaAs MOSFET Electronics." Invited Plenary Talk at 17th International Symposium on the Physics of Semiconductors and Applications (ISPSA-2014), Jeju Island, Korea, December 7-11, 2014. (slides)
RJ-154 Ni, K., E. X. Zhang, N. C. Hooten, W. G. Bennett, M. W. McCurdy, A. L. Sternberg, R. D. Schrimpf, R. A. Reed, D. M. Fleetwood, M. L. Alles, T.-W. Kim, J. Lin, and J. A. del Alamo. “Single-Event-Transient Response of InGaAs MOSFETs.” IEEE Transactions on Nuclear Science, Vol. 61, No. 6, pp. 3550-3556, December 2014. (paper)
RJ-153 Vardi, A., M. Tordjman, J. A. del Alamo and R. Kalish, "A Diamond:H/MoO3 MOSFET." IEEE Electron Device Letters, Vol. 35, No. 12, pp. 1320-1322, December 2014. (paper)
RJ-152 Lin, J., D. A. Antoniadis, and J. A. del Alamo, "Off-State Leakage Induced by Band-to-Band Tunneling and Floating-Body Bipolar Effect in InGaAs Quantum-Well MOSFETs." IEEE Electron Device Letters, Vol. 35, No. 12, pp. 1203-1205, December 2014. (paper)
RJ-151 Wu, Y., C.-Y. Chen, and J. A. del Alamo, "Activation Energy of Drain-Current Degradation in GaN HEMTs under High-Power DC Stress." Microelectronics Reliability, Vol. 54, No. 12, pp. 2668-2674, December 2014. (paper)
RJ-150 Guo, L. W., L. Xia, B. R. Bennett, J. B. Boos, M. G. Ancona and J. A. del Alamo, "Enhancing p-channel InGaSb QW-FETs via Process-induced Compressive Uniaxial Strain." IEEE Electron Device Letters, Vol. 35, No. 11, pp. 1088-1090, November 2014. (paper)
RC-227 del Alamo, J. A., "Recent progress in understanding the electrical reliability of GaN High-Electron Mobility Transistors." Invited Talk at IEEE Conference on Reliability Science for Advanced Materials and Devices (RSAMD-2014), Golden, CO, September 7-9, 2014. (slides)
RJ-149 Riel, H., L.-E. Wernersson, M. Hong, and J. A. del Alamo, "III-V compound semiconductor transistors: from planar to nanowire structures." Invited review. MRS Bulletin, Vol. 39, pp. 668-677, August 2014. (paper)
NR-116 del Alamo, J. A., "Nanometer-Scale III-V Electronics." The Age of Si Symposium, MIT Campus, July 25, 2014. (slides)
RC-226 Ni, K., E. X. Zhang, M. W. McCurdy, N. C. Hooten, W. G. Bennett, R. A. Reed, R. D. Schrimpf, D. M. Fleetwood, M. L. Alles, T. W. Kim and J. A. del Alamo, "Single Event Transient Response of InAs Quantum-Well MOSFETs." Nuclear and Space Radiation Effects Conference (NRSEC), Paris, France, July 14-18, 2014. (slides)
RC-225 Lin, J., L. Czornomaz, N. Daix, D. Antoniadis, and J. A. del Alamo, "Ultra-Thin-Body Self-Aligned InGaAs MOSFETs on Insulator (III-V-O-I) by a Tight-Pitch Process." 72nd IEEE Device Research Conference, Santa Barbara, CA, June 22-25, 2014, pp. 217-218. (paper) (slides)
RC-224 Vardi, A., X. Zhao, and J. A. del Alamo, "InGaAs Double-Gate Fin-Sidewall MOSFETs." 72nd IEEE Device Research Conference, Santa Barbara, CA, June 22-25, 2014, pp. 219-220. (paper) (slides)
RC-223 Gao, F., C. V. Thompson, J. A. del Alamo, and T. Palacios, "Role of Electrochemical Reactions in the Degradation Mechanisms of AlGaN/GaN HEMTs." Invited Talk at CS MANTECH, Denver, CO, May 19-22, 2014. (paper) (slides)
RC-222 Wu, Y., C.-Y. Chen, and J. A. del Alamo, "Temperature-Accelerated Degradation of GaN HEMTs under High-Power Stress: Activation Energy of Drain Current Degradation." Reliability of Compound Semiconductors Workshop (ROCS), Denver, CO, May 19, 2014, pp. 69-73. (paper) (slides)
RJ-148 Zhao, X. and J. A. del Alamo, "Nanometer-scale Vertical-Sidewall Reactive Ion Etching of InGaAs for 3-D III-V MOSFETs." IEEE Electron Device Letters, Vol. 35, No. 4, pp. 521-523, May 2014. (paper)
RJ-147 Lin, J., X. Zhao, D. A. Antoniadis, and J. A. del Alamo, "A Novel Digital Etch Technique for Deeply Scaled III-V MOSFETs." IEEE Electron Device Letters, Vol. 35, No. 4, pp. 440-442, April 2014. (paper)
RC-221 del Alamo, J. A., "III-V MOSFETs for CMOS: Recent Advances in Process Technology." Invited Talk at Semicon Korea 2014, Seoul, Korea, February 12-14, 2014. (slides)
RJ-146 Lu, W., A. Guo, A. Vardi, and J. A. del Alamo, "A Test Structure to Characterize Nano-scale Ohmic Contacts in III-V MOSFETs." IEEE Electron Device Letters, Vol. 35, No. 2, pp. 178-180, February 2014. (paper)
RJ-145 Gao, F., S. C. Tan, J. A. del Alamo, C. V. Thompson, and T. Palacios, "Impact of Electrochemical Reactions on the OFF-State Degradation of AlGaN/GaN HEMTs." IEEE Transactions on Electron Devices, Vol. 61, No. 2, pp. 437-444, February 2014. (paper)